Science of Nanoscale Systems and their Device Applications
Science of Nanoscale Systems and their Device Applications
Posters
Poster Session: Wednesday January 5
18:00-19:30
3rd Floor of Bioscience Building


P-01: Fabrication of nonvolatile memory and photovoltaic devices using hybrid nanocrystals system
Dong Uk Lee, Sang Woo Pak, and Eun Kyu Kim
Hanyang University

P-02: Effect of rapid thermal annealing on physical properties of Si1-xMnx diluted magnetic semiconductors
Jooyoung Suh, Kyoung Su Lee, Sang Woo Pak, Hooyoung Song, and Eun Kyu Kim
Hanyang University

P-03: Distinguishing quantum and classical transport through nanostructures
Neill Lambert,1 Clive Emary,2 Yueh-Nan Chen,3 and Franco Nori4
1RIKEN, 2Technische Universität Berlin, 3National Cheng-Kung University, 4University of Michigan

P-04: Solar energy conversion mimicking natural photosynthesis: Modeling the light-energy conversion in a molecular triad
Pulak Kumar Ghosh1, Anatoly Yu. Smirnov1, 2 and Franco Nori1, 2
1RIKEN, 2University of Michigan

P-05: Electron resonance tunneling through quantum dots with different g-factors

S. M. Huang1,2 , Y. Tokura3,4, H. Akimoto1, K. Kono1, J. J. Lin2, S. Tarucha4,5, and K. Ono1,2,4,6
1RIKEN, 2National Chiao Tung University, 3NTT Basic Research Laboratories, 4ICORP-JST, 5University of Tokyo, 6CREST-JST

P-06: Radiation-induced zero-resistance states in a nondegenerate 2D electron system
D. Konstantinov and K. Kono
RIKEN

P-07: Extending single-molecule spectroscopy to nanosecond through millisecond time scales
Lisa Marshall
Massachusetts Institute of Technology

P-08: Optical limiting of silica glass with ion-synthesized copper nanoparticles
A.N. Golubev1, S.I. Nikitin1, A.L. Stepanov1, 2, and D.A. Tayurskii1
1Kazan Federal University, 2Zavoisky Physical-Technical Institute

P-09: Non-extensive statistics for nanoscale systems - from quantum dots to quantum liquids
D. Tayurskii1, 2, A. Badrutdinov1, 2, N. Beysengulov1, K. Kono2, and Yu. Lysogorskii1
1Kazan Federal University, 2RIKEN

P-10: Laterally and vertically coupled triple vertical quantum dots
S. Amaha1, T. Hatano2, W. Izumida3, K. Ono1, K. Kono1, T. Tamura4, S. Teraoka5, T. Kubo4, Y. Tokura4, J. A. Gupta6, D. G. Austing6 , and S. Tarucha5
1RIKEN, 2ERATO-JST, 3Tohoku University, 4NTT Basic Research Laboratories, 5University of Tokyo, 6National Research Council Canada


P-11: Spin transport in suspended graphene
H. Goto1, 2, H. Tomori1, 2, Y. Toyota1, 2, S. Tanaka1, 2, Y. Ootuka1, K. Tsukagoshi2, 3, and A. Kanda1, 2
1University of Tsukuba, 2 National Institute for Materials Science, 3CREST-JST

P-12: Ballistic graphene Josephson junctions
H. Tomori1, 2, H. Goto1, 2, Y. Toyota1, 2, S. Tanaka1, 2, Y. Ootuka1, K. Tsukagoshi2, 3, M. Hayashi4, H. Yoshioka5, and A. Kanda1, 2
1University of Tsukuba, 2CREST-JST, 3 National Institute for Materials Science, 4Akita University, 5Nara Women's University

P-13: Superconducting graphene nanoelectronic devices
Joel I-Jan Wang
Harvard University

P-14: Concepts of graphene-based terahertz and infrared devices
V. Ryzhii1,5, M. Ryzhii1,5, N. Ryabova1,5, A. A. Dubinov1,2,V. Ya. Aleshkin2, V. Mitin3, A. Satou4,5, and T. Otsuji4,5
1University of Aizu, 2Institute for Physics of Microstructure, 3University at Buffalo, 4Tohoku University, 5CREST-JST

P-15: Effects of metal contact on the electronic properties of a metallic carbon nanotube and graphene
Kazume Nishidate and Masayuki Hasegawa
Iwate University

P-16: Analysis of piezoelectric response toward PZT-CNT-FET
Shogo Kataoka, Takako Okada, Takayuki Arie, and Seiji Akita
Osaka Prefecture University

P-17: Cantilevered carbon nanotube electro-mechanical device
Naoyuki Matsunaga1, Ryosuke Nishii1, Takayuki Arie1, 2, and Seiji Akita1, 2
1Osaka Prefecture University, 2CREST-JST

P-18: Nano-slot waveguide QED system on a chip
Qimin Quan, Irfan Bulu, Jennifer T Choy, and Marko Loncar
Harvard University

P-19: Graphene quantum dots formed by spatial modulation of the Dirac gap
G. Giavaras1 and Franco Nori1, 2
1RIKEN, 2University of Michigan

P-20: Point-contact transport properties of a classical electron system
D. G. Rees1, I. Kuroda1,2, C. A. Marrache-Kikuchi1, M. Hofer3, P. Leiderer3, and K. Kono1,2 1RIKEN, 2Tokyo Institute of Technology, 3University of Konstanz

P-21: Electron imaging in graphene
Sagar Bhandari, Jesse Berezovsky, Mario Borunda, Eric Heller, and Robert Westervelt
Harvard University

P-22: Fluctuation relation in a semiconductor double quantum dot
Y. Utsumi1, D. S. Golubev2, M. Marthaler3, K. Saito4, T. Fujisawa5, 6, and Gerd Schön2,3
1Mie University, 2Forschungszentrum Karlsruhe, 3Universität Karlsruhe, 4University of Tokyo, 5NTT Basic Research Laboratories, 6Tokyo Institute of Technology

P-23: Electrical control of g-tensor in self-assembled InAs quantum dots
Y. Kanai1, R. S. Deacon1, A. Oiwa1,2, S. Takahashi1, K. Yoshida1, K. Shibata1, K. Hirakawa1,2, and S. Tarucha1
1University of Tokyo, 2CREST-JST

P-24: Carbon nanotube quantum dot made by molecular lithography technique
M. Shimizu1,2, R. Negishi 1, H. Akimoto1, and K. Ishibashi1
1RIKEN, 2Tokyo University of Science

P-25: Displacement noise squeezing in an electromechanical resonator
Imran Mahboob, Emmanuel Flurin, Katsuhiko Nishiguchi, Akira Fujiwara, and Hiroshi Yamaguchi NTT Basic Research Laboratories

P-26: Highly sensitive bio-materials detection with the double-walled CNT-FET devices
Takahiro Morimoto1, Shota Yajima1, Takahiro Mori1, Kazuo Omura1, Noriko Maeda2, Katusmi Uchida2, Hirofumi Yajima2, and Koji Ishibashi
1 1RIKEN, 2Tokyo University of Science

P-27: A study of supercurrent in InAs nanowires around pinch-off
Takahiro Nishio1, T. Kozakai1,2, S. Amaha1, M. Larsson3, H. A. Nilsson3, H. Q. Xu3, G. Zhang4, K. Tateno4, H. Takayanagi2, and K. Ishibashi1
1 RIKEN, 2Tokyo University of Science, 3Lund University, 4NTT Basic Research Laboratories

P-28: Application of self-assemble molecular to the molecular lithography and nanogap device
Takayuki Nishino1,2, Ryota Negishi3, and Koji Ishibashi1
1RIKEN, 2Chiba University, 3Osaka University

P-29: Germanium-carbon core-shell nanowires
Byung-Sung Kim1, 2, Min Jin Kim1, 2, Jong Cheol Lee1, 2, Sung Woo Hwang2, and Dongmok Whang1, 2 1Sungkyunkwan University, 2Korea University

P-30: Single-electron transport through a germanium nanowire
Sung-Kwon Shin1,2, Shaoyun Huang2, Naoki Fukata3, and Koji Ishibashi1,2 1RIKEN, 2Tokyo Institute of Technology, 3National Institute for Materials Science

P-31: Study on a grapheme FET nanosensor

A. M. Mahjoub1, T. Abe1, S. Motooka1, N. Aoki1, J. Song2, G. Aizin3, J. P. Bird2, D. K. Ferry4, Y. Kawano5, K. Ishibashi5 , and Y. Ochiai1
1Chiba University, 2The State University of New York, 3Kingsborough College of the City University of New York, 4Arizona State University, 5RIKEN

P-32: Energy qubit quantum information processing by semiconductor two-photon processes
Alex Hayat, Pavel Ginzburg , Amir Nevet, and Meir Orenstein
Technion

P-33: Ultrafast semiconductor g(4) measurement by HBT interferometry of quantum-well based upconversion
Alex Hayat, Amir Nevet, and Meir Orenstein
Technion

P-34: DNA translocation through graphene nanopores
C. A. Merchant, K. Healy, M. Wanunu, V. Ray, N. Peterman, J. Bartel, M. D. Fischbein, K. Venta, Z. T. Luo, A. T. C. Johnson , and M. Drndic
University of Pennsylvania

P-35: Evidence for ballistic transport of classical electrons on helium at a point contact
I. Kuroda1, 2, D. G. Rees1, C. A. Marrache-Kikuchi1, M. Hofer3, P. Leiderer3, and K. Kono1, 2 1RIKEN, 2Tokyo Institute of Technology, 3University of Konstanz

P-36: Nonlinear optical phenomena in plasmonic nanocavity gratings
P. Genevet1,2, R. Blanchard1, J. P. Tetienne1, E. Gatzogiannis1, M. A. Kats1, M. O. Scully2,3, and F. Capasso1,2
1Harvard University, 2Texas A&M University, 3Princeton University

P-37: Contact resistance in graphene-based devices
Eiichiro Watanabe, DaijuTsuya and Yasuo Koide
National Institute for Materials Science

P-38: Large area multi-material plasmonic nanostructures by nanoskiving
Mikhail A. Kats, Darren J. Lipomi, Philseok Kim, Ramses V. Martinez, Sung H. Kang, Joanna Aizenberg, George M. Whitesides, and Federico Capasso
Harvard University

P-39: Highly sensitive terahertz sensing and imaging devices with nano-structured semiconductors and carbon materials
Y. Kawano and K. Ishibashi
RIKEN

P-40: A spontaneous field induced macroscopic quantum tunneling in intrinsic Josephson junctions
Y. Chizaki1,2, H. Kashiwaya1, S. Kashiwaya1, T. Koyama2,3, S. Kawabata1,3
1AIST, 2CREST, 3Tohoku University

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  Last Modified January 19, 2011 by the NSEC Office.