Metal-semiconductor Nano-composite Material as seen in Cross-section in an Electron Microscope Image
D. Klenov, D. Driscoll, M. Hanson, S. Stemmer and A.C. Gossard
Dark-colored lines are layers of metal islands (erbium arsenide) in a semiconductor
(indium gallium arsenide). The unique honeycomb structure occurs
with alternate growth of ErAs and InGaAs by molecular beam epitaxy.
The metal islands form in a spontaneous island mode of crystal growth.
Faceting of the surface and appearance of the honeycomb structure
occur only for metal depositions and indium content greater than
a certain level.