Science of Nanoscale Systems and their Device Applications
Science of Nanoscale Systems and their Device Applications
2004 Research Results

Kondo Effect in a Single Electron Transistor Excited by Microwaves
M.A. Kastner, C.M. Marcus

Kondo Effect in a Single Electron Transistor Excited by Microwaves

(A) Evolution of the Kondo peak with increasing microwave voltage Vdsosc applied to a single electron transistor SET at T = 100 mK.
(B) Separation between the satellites and the central peak as a function of the microwave voltage. The horizontal line is hf/e where h is Planck’s constant and f is the microwave frequency.

 

  Last Modified June 20, 2006 by the NSEC Office.